| 摘要 |
A method and a suitable device for carrying out this method is proposed, for etching a substrate ( 10 ), especially a silicon element, with the aid of an inductively coupled plasma ( 14 ). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma ( 14 ) from reactive particles in a reactor ( 15 ). In this connection, the inductively coupled plasma ( 14 ) comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil ( 21 ) is provided which produces a static or timewise varying magnetic field between the substrate ( 10 ) and the ICP source ( 13 ). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate ( 10 ) and the inductively coupled plasma ( 14 ).
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