| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device capable of preventing and suppressing the etching of the edge and the rear surface of a wafer and securing the improvement of uniformity of an etching rate in a surface. SOLUTION: The dry etching device is provided with a lower electrode 4 having an electrostatic attraction mechanism, a high voltage DC power supply 13 for impressing high voltage DC power on the lower electrode 4, a first high-frequency power supply 5 for impressing high-frequency power on the lower electrode 4, an upper electrode 9 installed above the lower electrode 4, a second high-frequency power supply 12 for impressing the high-frequency power on the upper electrode 9, an insulating annular body 15 arranged around at least the circumference of the lower electrode 4, a circumferential electrode 11 arranged around at least the outer periphery of the insulating annular body 15, and a third high-frequency power supply 14 for impressing the high-frequency power on the circumferential electrode 11. COPYRIGHT: (C)2005,JPO&NCIPI
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