发明名称 |
Semiconductor device and method for forming the same |
摘要 |
A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitrogen oxide atmosphere on a semiconductor coating having provided on an insulator substrate; and irradiating a pulsed laser beam or an intense light thereto to remove clusters of such as carbon and hydrocarbon to thereby eliminate trap centers from the silicon oxide film. Also claimed is a process comprising implanting nitrogen ions into a silicon oxide film and annealing the film thereafter using an infrared light, to thereby obtain a silicon oxynitride film as a gate insulator having a densified film structure, a high dielectric constant, and an improved-withstand voltage.
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申请公布号 |
US2005110091(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040017640 |
申请日期 |
2004.12.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ZHANG HONGYONG |
分类号 |
G02F1/13;G02F1/136;G09F9/00;G09F9/35;H01L21/00;H01L21/02;H01L21/20;H01L21/28;H01L21/31;H01L21/3105;H01L21/314;H01L21/324;H01L21/336;H01L21/8234;H01L21/84;H01L27/00;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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地址 |
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