| 摘要 |
PROBLEM TO BE SOLVED: To correct the pattern of a photomask with high accuracy. SOLUTION: Three points of reference patterns 3a, 3b, 3c are formed to surround a defect of a pattern 2. After the positions of the reference patterns 3a, 3b, 3c are recorded, a process region 4 including the defect is determined and the extent of the process region 4 and a reference point 5 are recorded. The relative positional relation between the reference patterns 3a, 3b, 3c and the reference point 5 is recorded. After each position of the reference patterns 3a, 3b, 3c is reconfirmed, the process region 4 is repeatedly irradiated with a beam. The position of the reference patterns 3a, 3b, 3c is confirmed while the region is being irradiated with the beam. When the position of the process region 4 is to be corrected by using the reference patterns 3a, 3b, 3c, the position correction of the process region 4 from a displaced reference pattern 3a' is stopped, and the position of the process region 4 is corrected from the rest of reference patterns 3b, 3c. COPYRIGHT: (C)2005,JPO&NCIPI |
