| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode manufacturing method which is capable of preventing an active layer from deteriorating due to the diffusion of impurities and keeping a p-type clad layer sufficiently high in carrier concentration so as to realize an AlGaInP semiconductor laser diode of high quality. SOLUTION: After the active layer 4 is grown, the p-type clad layer (first part 5a) is grown while Mg material is fed sufficiently for a while after the p-type clad layer 5 is started growing. The p-type clad layer is kept growing (second part 5b) as the supply of Mg material is stopped temporarily at a halfway point, then the p-type clad layer (third part 5c) is grown as the Mg material is supplied, and lastly a Zn-GaAs contact layer 6 is grown. COPYRIGHT: (C)2005,JPO&NCIPI
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