Production of oxide layer in/on substrate surface used in the production of semiconductors comprises structuring the substrate surface, and thermally oxidizing the substrate surface to form an oxide layer

摘要

Production of an oxide layer in/on a substrate surface (1) comprises structuring the substrate surface so that the substrate surface produced by the structuring process is increased compared with the original substrate surface, and thermally oxidizing the substrate surface to form an oxide layer. The local extent of the oxide layer formation is controlled by the local substrate surface increase produced by the structuring process.