| 发明名称 |
Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same |
| 摘要 |
<p>A mask with rectangular openings is formed on a large-scaled silicon substrate, and an AlN micro crystalline layer is formed in a thickness of 200nm or over through the mask on the silicon substrate by means of selective and lateral growth. Then, a nitride semiconductor crystal layer with a composition of InxGayAlzN (0≤x, y, z≤1, x+y+z=1) is formed on the AlN micro crystalline layer.</p> |
| 申请公布号 |
EP1528590(A2) |
申请公布日期 |
2005.05.04 |
| 申请号 |
EP20040025832 |
申请日期 |
2004.10.29 |
| 申请人 |
NAGOYA UNIVERSITY CORPORATION NAGOYA UNIVERSITY |
发明人 |
SAWAKI, NOBUHIKO;HONDA, YOSHIO;NISHIMURA, YOSHIYUKU |
| 分类号 |
C30B29/38;C23C16/34;H01L21/20;H01L21/205;(IPC1-7):H01L21/20 |
主分类号 |
C30B29/38 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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