| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device preventing the surface of a polymide film from being broken and reduced in film thickness when a photoresist pattern is removed by plasma treatment or the like. SOLUTION: The manufacturing method for the semiconductor device includes a process in which metal wiring is formed on a substrate, a process in which a first insulating film is formed on the substrate so as to coat the metal wiring, and a process in which the polyimide film is formed on the first insulating film. The manufacturing method further includes a process in which a second insulating film is formed on the polyimide film, a process in which a photoresist pattern is formed on the second insulating film, and a process in which the second insulating film is etched while using a resist as a mask. The manufacturing method further includes a process in which the resist is removed, and a process in which the second insulating film and the first insulating film on the metal wiring are removed. The second insulating film is removed completely while the first insulating film on the metal wiring is also removed completely. COPYRIGHT: (C)2005,JPO&NCIPI
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