发明名称 |
Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device |
摘要 |
A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
|
申请公布号 |
US2005087789(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040902824 |
申请日期 |
2004.08.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAIK HION-SUCK;LEE JUNG-HYUN;PARK JONG-BONG;PARK YUN-CHANG |
分类号 |
H01L27/108;H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):H01L21/44 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|