发明名称 |
Semiconductor display device |
摘要 |
It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protective circuit and a second interlayer insulating film, which is an insulating coating film, is formed covering a wiring formed over the first interlayer insulating film, a wiring for connecting the TFT to other semiconductor elements is formed so as to be in contact with the surface of the second interlayer insulating film so as to secure a path discharging charge accumulated in the surface of the second interlayer insulating film. Note that the TFT used for the protective diode is a so-called diode-connected TFT in which either of the first terminal or the second terminal is connected to a gate electrode.
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申请公布号 |
US2005087741(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040963585 |
申请日期 |
2004.10.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L51/50;H01L21/3205;H01L21/768;H01L21/77;H01L21/822;H01L21/84;H01L23/52;H01L23/522;H01L27/04;H01L27/06;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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