发明名称 Semiconductor display device
摘要 It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protective circuit and a second interlayer insulating film, which is an insulating coating film, is formed covering a wiring formed over the first interlayer insulating film, a wiring for connecting the TFT to other semiconductor elements is formed so as to be in contact with the surface of the second interlayer insulating film so as to secure a path discharging charge accumulated in the surface of the second interlayer insulating film. Note that the TFT used for the protective diode is a so-called diode-connected TFT in which either of the first terminal or the second terminal is connected to a gate electrode.
申请公布号 US2005087741(A1) 申请公布日期 2005.04.28
申请号 US20040963585 申请日期 2004.10.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 H01L51/50;H01L21/3205;H01L21/768;H01L21/77;H01L21/822;H01L21/84;H01L23/52;H01L23/522;H01L27/04;H01L27/06;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 主分类号 H01L51/50
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