发明名称 |
Polylactide/silicon-containing block copolymers for nanolithography |
摘要 |
A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning. |
申请公布号 |
US9120117(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201313761763 |
申请日期 |
2013.02.07 |
申请人 |
Board of Regents, The University of Texas System |
发明人 |
Ellison Christopher John;Willson Carlton Grant;Cushen Julia;Bates Christopher M. |
分类号 |
B05D1/00;B05D3/00;B05D5/00;B05C21/00;C08G63/695;C08F112/14;G03F7/00;B82Y10/00;B82Y40/00 |
主分类号 |
B05D1/00 |
代理机构 |
Medlen & Carroll, LLP |
代理人 |
Medlen & Carroll, LLP |
主权项 |
1. A method of forming nanostructures on a surface, comprising a) providing a silicon and lactide-containing block copolymer and a surface, wherein said surface is coated with a surface energy neutralizing layer comprising parylene; b) spin coating said block copolymer on said surface to create a coated surface; and c) annealing said coated surface to create nanostructures on said surface. |
地址 |
Austin TX US |