发明名称 Polylactide/silicon-containing block copolymers for nanolithography
摘要 A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.
申请公布号 US9120117(B2) 申请公布日期 2015.09.01
申请号 US201313761763 申请日期 2013.02.07
申请人 Board of Regents, The University of Texas System 发明人 Ellison Christopher John;Willson Carlton Grant;Cushen Julia;Bates Christopher M.
分类号 B05D1/00;B05D3/00;B05D5/00;B05C21/00;C08G63/695;C08F112/14;G03F7/00;B82Y10/00;B82Y40/00 主分类号 B05D1/00
代理机构 Medlen & Carroll, LLP 代理人 Medlen & Carroll, LLP
主权项 1. A method of forming nanostructures on a surface, comprising a) providing a silicon and lactide-containing block copolymer and a surface, wherein said surface is coated with a surface energy neutralizing layer comprising parylene; b) spin coating said block copolymer on said surface to create a coated surface; and c) annealing said coated surface to create nanostructures on said surface.
地址 Austin TX US