Electroluminescent device comprising porous silicon

摘要

An electroluminescent device ( 10 ) comprises a porous silicon region ( 22 ) adjacent a bulk silicon region ( 20 ), together with a top electrical contact ( 24 ) of transparent indium tin oxide and a bottom electrical contact ( 26 ) of aluminium. The device includes a heavily doped region ( 28 ) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device ( 10 ) has a rectifying p-n junction within the porous silicon region ( 22 ).