发明名称 Fabrication method of semiconductor integrated circuit device
摘要 A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, it is possible to prevent run-off of ionized amine into the ultrapure water.
申请公布号 US2005087493(A1) 申请公布日期 2005.04.28
申请号 US20040996464 申请日期 2004.11.26
申请人 发明人 TAKAHASHI OSAMU;OGASAWARA KUNIO
分类号 H01L21/8247;C02F9/00;H01L21/304;H01L21/306;H01L21/8234;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):B01D61/00 主分类号 H01L21/8247
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