| 摘要 |
A composite patterning technique may include two lithography processes. A first lithography process may use interference lithography to form a continuous pattern of lines of substantially equal width on a photoresist. A second lithography process may use one or more non-interference lithography techniques, such as optical lithography, imprint lithography and electron-beam lithography, to break continuity of the patterned lines and form desired integrated circuit features. |
