发明名称 [PIXEL STRUCTURE OF ACTIVE ORGANIC LIGHT EMITTING DIODE]
摘要 A pixel structure of active organic light emitting diode is disclosed, which comprises an organic light emitting diode, a data-line, a scan-line, a switch thin film transistor (TFT), a control TFT, and a capacitor. The switch TFT has a first lightly doping drain and the control TFT has a second lightly doping drain. The doped concentration of the second lightly doped drain region is higher than that of the first lightly doped drain region. The leakage current in the switch TFT is reduced and the kink effect in the control TFT is improved by the pixel structure of an active organic light emitting diode. Therefore, a better display performance is provided.
申请公布号 US2005078071(A1) 申请公布日期 2005.04.14
申请号 US20030707110 申请日期 2003.11.21
申请人 发明人 CHEN KUN-HONG
分类号 G09G3/32;G09G3/36;H01L21/77;H01L27/12;H01L27/13;H01L27/32;H01L29/786;(IPC1-7):G09G3/36 主分类号 G09G3/32
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