METHOD FOR DEPOSITING METAL LAYERS USING SEQUENTIAL FLOW DEPOSITION

摘要

A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate by thermal decomposition, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal­carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, MO(CO)6, C02(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.