发明名称 PROCESSING APPARATUS AND PROCESSING METHOD OF OBJECT TO BE PROCESSED
摘要 PROBLEM TO BE SOLVED: To provide a processing apparatus capable of easily controlling circulating gas in dry etching. SOLUTION: A processing apparatus 100 comprises a shower head 200 which supplies a processing gas into a process chamber through a plurality of gas support holes, a turbo pump 120 which exhausts the process gas from the process chamber 110, and a circulating gas piping 150 for returning at least a part of the gas (circulating gas Q2) exhausted from the process chamber by the turbo pump to the shower head. The shower head comprises a primary gas supply system which supplies a primary gas Q1 supplied from a gas source 140 into the process chamber through a plurality of primary gas blowout holes h1, and a circulating gas supply system that supplies the circulating gas into the process chamber through a plurality of circulating gas supply holes. The primary gas supply system and the circulating gas supply system are independent from each other, and the ratio in area between the primary gas support hole and the circulating gas support hole is constant across the entire surface of the gas supply mechanism. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101626(A) 申请公布日期 2005.04.14
申请号 JP20040303316 申请日期 2004.10.18
申请人 TOKYO ELECTRON LTD;TOSHIBA CORP 发明人 SAITO MASASHI;HIRAYAMA YUSUKE;SAKAI ITSUKO;OIWA NORIHISA
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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