SEMICONDUCTOR DEVICE HAVING CAPACITOR-UNDER-BITLINE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device having capacitor-under-bit line structure and a fabricating method thereof are provided to protect safely a capacitor from diffusion of a metal line arranged on a top part of the capacitor by forming a protective layer around a capacitor. A gate structure(110) is formed on a semiconductor substrate(100). A first insulating layer(120) having a storage contact(122) is formed on the gate structure and the semiconductor substrate. A second insulating layer(130) having a capacitor hole(131) for exposing the storage contact is formed on the first insulating layer. A capacitor(140) is formed by stacking a bottom electrode(141), a dielectric layer(142), and a top electrode(143) into the capacitor hole. A protective layer(150) is formed around the capacitor. A third insulating layer(160) having a wiring contact(162) connected to a surface of the top electrode is formed on the protective layer and the second insulating layer. A metal line(180) is formed on the wiring contact.