APPARATUS FOR FORMING FINE PATTERNS OF SEMICONDUCTOR WAFER BY SHIFT PATTERNING AND THE METHOD OF THE SAME

摘要

An apparatus for forming fine patterns of a semiconductor device by a shift patterning process is provided to form an ultra-fine pattern by shifting a pattern in performing an exposure process. A photoresist layer is formed on a wafer(9). Light is irradiated to the wafer to form a reference pattern(7). The edge of the reference pattern is sequentially exposed by shifting the wafer to form a pattern(15) finer than the reference pattern. After a PEB(post exposure bake) process is performed on the wafer, the exposed portion is developed.