| 摘要 |
A pattern size correcting device comprising a testing photomask (1) having a test pattern, a quantifying means (2) for quantifying, by using the testing photomask (1), variations in test pattern size as a function of a distance and in relation to numerical apertuture, a numerical aperture calculating means (3) for dividing an exposure area having a plurality of real device patterns into a plurality of correction areas to calculate numerical apertures for respective correction areas, a data correcting means (4) for inputting numerical apertures calculated in the aperture calculating means (3) to the quantified results using the testing photomask (1), calculating, for respective correction areas, variations in real device pattern size, and correcting the design data of a real device pattern based on the results of the calculation, and a proximity effect correcting means (5) for correcting a proximity effect. This correcting device enables us to quantitatively estimate variations in size occurring in a pattern to be exposed in lithography and, based on this, to accurately correct a pattern size easily. |
