| 摘要 |
PROBLEM TO BE SOLVED: To easily attain improvement in the breakdown voltage and reliability of a semiconductor device. SOLUTION: The semiconductor device is provided with a first base layer 1 of a first conductivity-type; a second base layer 2 of a second conductivity-type which is selectively formed on a main surface of the first base layer; a stopper layer 6 of a first conductivity-type which surrounds periphery of the second base layer, having a predetermined distance from the second base layer and is formed on the main surface of the first base layer; and a ring layer 8 which is a ring layer of a second conductivity-type which is formed on the main surface of the first base layer at a part between the second base layer and the stopper layer, arranged into a curled shape around the second base layer, and electrically connected to the second base layer and the stopper layer. COPYRIGHT: (C)2005,JPO&NCIPI |
