发明名称 METHOD AND FACILITY FOR THE PRODUCTION OF A BAND ON A SUBSTRATE BAND
摘要 Disclosed is a method for producing an HTSC band (16) on a substrate band, for example, a strong bond being created between the substrate band (12) and the band as a result of the production process (e.g. PVD process or galvanic deposition). According to the invention, the bond comprising the substrate band (12) and the band (16) is delivered to a separating device following the production thereof. The bond is heated by means of tempering rollers (19a, 19b) and/or depending on the application abruptly chilled in a cooling bath (20) in said separating device before being separated such that tension-related stress is generated in the joint on the boundary surface between the bands (12, 16) due to different thermal expansion coefficients. Said stress facilitates or even causes separation of the band (16) from the substrate band (12), thus allowing the band (16) to be removed in a gentle fashion thereafter. Also disclosed is a production facility in which the production unit (17) and the separating device (15) are thermally decoupled, especially by means of a thermal shield (22).
申请公布号 WO2005031042(A2) 申请公布日期 2005.04.07
申请号 WO2004DE02202 申请日期 2004.09.28
申请人 SIEMENS AKTIENGESELLSCHAFT;ARNDT, AXEL;HANSEN, CHRISTIAN;KRUEGER, URSUS;PYRITZ, UWE 发明人 ARNDT, AXEL;HANSEN, CHRISTIAN;KRUEGER, URSUS;PYRITZ, UWE
分类号 C23C14/00;C23C16/01;C25D1/04;C25D1/20 主分类号 C23C14/00
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