| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a crystal of a group III nitride, by which the high quality group III nitride crystal having a size larger than that of a conventional crystal can be grown. SOLUTION: In the method for growing the crystal of the group III nitride, comprising growing the group III nitride crystal from a solution 25 which is held in a solution holding vessel 12 and in which at least an alkali metal, a group III metal and nitrogen are dissolved, the crystal is grown while setting the volume of an area where alkali metal vaporized from the solution holding vessel 12 condenses to be smaller than the volume of the alkali metal previously held in the solution holding vessel 12. COPYRIGHT: (C)2005,JPO&NCIPI
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