发明名称 |
Amorphizing ion implant method for forming polysilicon emitter bipolar transistor |
摘要 |
A method for fabricating a polysilicon emitter bipolar transistor employs a pair of ion implant methods. A first of the ion implant methods implants a portion of an intrinsic base region interposed between an extrinsic base region and a polysilicon emitter layer with an amorphizing non-active dopant. A second of the ion implant methods implants the polysilicon emitter layer with an active dopant to form a doped polysilicon emitter layer. The polysilicon emitter bipolar transistor is fabricated with enhanced performance.
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申请公布号 |
US2005074942(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20040834782 |
申请日期 |
2004.04.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
AN FENG-YUAN;WANG HUAN-WEN |
分类号 |
H01L21/265;H01L21/331;H01L29/08;H01L29/737;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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