发明名称 |
LATERAL THIN-FILM SOI DEVICE HAVING A FIELD PLATE WITH ISOLATED METALLIC REGIONS |
摘要 |
<p>In a lateral thin-film Silicon-On-Insulator (SOI) device, a field plate is provided to extend substantially over a lateral drift region to protect the device from package and surface charge effects. In particular, the field plate comprises a layer of plural metallic regions which are isolated laterally from one another by spacing so as to assume a lateral electric field profile which is established by a volume doping gradient in the silicon drift region.</p> |
申请公布号 |
WO2005031876(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
WO2004IB51875 |
申请日期 |
2004.09.27 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS, N.V.;LETAVIC, THEODORE |
发明人 |
LETAVIC, THEODORE |
分类号 |
H01L29/06;H01L29/40;H01L29/417;H01L29/786;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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