Bondflächenstruktur zum Testen integrierter Schaltungen während des Herstellungsverfahrens

摘要

A method of fabricating a bond and the bond. The process includes providing a lower level (M1,13, 15) of electrically conductive metal disposed on a substrate having a pair of spaced apart sections. An electrically insulating layer (11) is then disposed over the lower level and vias (23) are formed in the electrically insulating layer, individual ones of the vias extending to one of the spaced apart section of the lower level. An upper level of electrically conductive metal (M2, 17, 19) is disposed on the electrically insulating layer, the upper level having a pair of spaced apart sections, each coupled to one of the sections of the lower level through a via. One of the pair of spaced apart sections of the lower level is preferably essentially U-shaped (13) and the other section (15) of the lower level is essentially rectangular shaped and extends into the open end of the "U". One of the pair of spaced apart section of the upper level is essentially rectangular (17) with a rectangular aperture at its central region and the other section of the upper level (19) is essentially rectangular and disposed within the rectangular aperture. A bond (23) is formed completely enclosing the spaced apart sections of the upper level.