发明名称 Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof
摘要 The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.
申请公布号 US2005072974(A1) 申请公布日期 2005.04.07
申请号 US20040952754 申请日期 2004.09.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA OSAMU;SATO JUNKO
分类号 H01L21/28;G02F1/136;H01L21/336;H01L21/48;H01L21/77;H01L21/84;H01L23/498;H01L27/12;H01L29/786;(IPC1-7):H01L29/10 主分类号 H01L21/28
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