发明名称 Method of manufacturing a semiconductor device including a bump forming process
摘要 A method of manufacturing a semiconductor device includes an improved bump forming process. The bump forming process includes a bump forming step for forming a bump on the pad by feeding a gold wire from a capillary while moving the capillary; a sliding step of slightly moving the capillary in an almost horizontal direction after the formation of the bump to reduce the strength of the base portion of the gold wire connected to the bump; and a wire cutting step of cutting the gold wire at the base portion after the sliding step. In the sliding step, a moving speed of the capillary is made smaller than that in the bump forming step.
申请公布号 US2005074958(A1) 申请公布日期 2005.04.07
申请号 US20040954520 申请日期 2004.10.01
申请人 RENESAS TECHNOLOGY CORP. 发明人 IWATA TETSUYA;MORIGA NAMIKI
分类号 H01L21/00;H01L21/44;H01L21/60;H01L21/607;H01L21/66;(IPC1-7):H01L21/00 主分类号 H01L21/00
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