THIN FILM TRANSISTOR USING MILC AND METHOD FOR FABRICATING THE SAME

摘要

A thin film transistor using MILC(metal induced lateral crystallization) is provided to prevent a gate electrode from being oxidized by performing an MILC after an oxidation blocking layer is formed on an insulation substrate. An active layer(320) is formed on an insulation substrate(300), having a source/drain region. A gate electrode(340) is formed on a gate insulation layer(330). An interlayer dielectric(350) is formed which has a contact hole exposing the source/drain region and a part of the gate electrode. The uniformity of the contact hole size is from 3 percent to 7 percent.