发明名称 CHROMIUM PLATING APPARATUS AND METHOD IN VACCUM STATE
摘要 Provided are vacuum chromium plating method and apparatus capable of depositing plural plating layers on plating objects, preventing cracks from forming on the plating layers to obtain high quality products, preventing generation of environmental waste and simplifying plating process to improve productivity. A vacuum chromium plating apparatus(A) comprises: a chamber(2) at one side of an inner part of which an arc target(4) for generating arc is installed, and at the other side of the inner part of which a sputter target(6) for sputtering is installed; an arc power supply panel(42) connected to the arc target; a sputter power supply panel(62) connected to the sputter target; and a vacuum pump(8) installed at one side of the chamber such that inside of the chamber is maintained to the vacuum state by the vacuum pump. A vacuum chromium plating method comprises: a step of stationing plating bodies(200) and plating objects(100) in a chamber; a step of maintaining pressure inside the chamber to a range of 10^-3 to 10^-7 torr and maintaining temperature inside the chamber to a range of 250 to 450 deg.C; and a step of impressing a power supply to the plating bodies and the plating objects, thereby performing ion deposition by arc discharge and sputtering.
申请公布号 KR20050032403(A) 申请公布日期 2005.04.07
申请号 KR20030068453 申请日期 2003.10.01
申请人 LEE, HAK DONG;SAMYOUNG CONNECT CO.,LTD. 发明人 LEE, HAK DONG;PARK, SOON KWAN
分类号 C23C14/22;(IPC1-7):C23C14/22 主分类号 C23C14/22
代理机构 代理人
主权项
地址