method for forming a thin film, and method for a gate electrode and a transistor using the same,申请号KR20020039817-传众专利搜索

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发明名称	method for forming a thin film, and method for a gate electrode and a transistor using the same
摘要
申请公布号	KR100481073(B1)	申请公布日期	2005.04.07
申请号	KR20020039817	申请日期	2002.07.09
申请人		发明人
分类号	H01L21/336;H01L21/28;H01L21/316;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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