发明名称 |
Semiconductor storage device formed to optimize test technique and redundancy technology |
摘要 |
There is provided a semiconductor storage device in which only a defective element is replaced by a row redundant element to compensate for a defect if at least one of a plurality of elements is defective in a case where the plurality of elements in a memory cell array are simultaneously activated. The semiconductor storage device includes an array control circuit which is configured to interrupt the operation of the defective element by preventing a word line state signal from being received based on a signal to determine whether a row redundancy replacement process is performed or not. The word line state signal is input to the plurality of memory blocks in the cell array unit via a single signal line.
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申请公布号 |
US6876588(B2) |
申请公布日期 |
2005.04.05 |
申请号 |
US20030664464 |
申请日期 |
2003.09.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATO DAISUKE;TAIRA TAKASHI;ISHIZUKA KENJI;WATANABE YOHJI;YOSHIDA MUNEHIRO |
分类号 |
G11C8/02;G11C29/00;G11C29/26;(IPC1-7):G11C7/00 |
主分类号 |
G11C8/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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