发明名称 SILICON NITRIDE-COMBINED SiC REFRACTORY AND ITS PRODUCING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon nitride-combined SiC refractory which has heat resistance, thermal shock resistance, oxidation resistance, and high strength, and is excellent in creep resistance and thermal conductivity; and to provide a method for producing the same. <P>SOLUTION: The silicon nitride-combined SiC refractory contains SiC as a main phase and Si<SB>3</SB>N<SB>4</SB>and/or Si<SB>2</SB>N<SB>2</SB>O as sub-phases, and has a bending strength of &ge;150 MPa, and a bulk specific gravity of &ge;2.6. The method for producing the silicon nitride-combined SiC refractory includes a process for mixing 0.1-3 wt.%, expressed in terms of oxide, of at least one kind selected from Al, Ca, Fe, Ti, Zr and Mg with 30-70 wt.% SiC powder, as aggregate, having grain sizes of 30-300 &mu;m, 10-50 wt.% SiC powder having particle sizes of 0.05-30 &mu;m, and 10-30 wt.% Si powder having particle sizes of 0.05-30 &mu;m. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005082451(A) 申请公布日期 2005.03.31
申请号 JP20030317022 申请日期 2003.09.09
申请人 NGK INSULATORS LTD;NGK ADREC CO LTD 发明人 KINOSHITA TOSHIHARU;KOMIYAMA TSUNEO
分类号 C04B35/565;C04B35/577;C04B35/63;C04B35/66 主分类号 C04B35/565
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