| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor, by which interlayer capacity is reduced and mechanical strength are improved in multilayer interconnection structure, and to provide a method for manufacturing the semiconductor device. SOLUTION: In the semiconductor device having the multilayer interconnection structure, a non-porous film (303) is applied only to an interlayer insulating film, directly under a wiring (310), and porous films are applied to the other interlayer insulating films. COPYRIGHT: (C)2005,JPO&NCIPI
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