Field effect transistor fabrication method, involves forming temporary monocrystalline material portion over surface of conducting substrate, and depositing semiconductor material on portion of temporary material

摘要

The method involves forming a temporary monocrystalline material portion over a surface (S) of a conducting substrate (100). A semiconductor material (2) is deposited on the portion of temporary material. A part of the temporary material is withdrawn via an access zone. An insulating coating is formed on parts of the material (2). A conducting material (4) is formed above and below a central part of the material (2). An independent claim is also included for a random access memory unit.