| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing silicon nitride film of higher film quality even under lower processing temperature. SOLUTION: The silicon nitride (SiN) film is deposited on a substrate 6 with the silane (SiH<SB>4</SB>) gas and nitride (N<SB>2</SB>) gas used as the raw material gasses by utilizing an ICP type plasma CVD apparatus. In this case, the supply flow rate of nitrogen (N<SB>2</SB>) gas is set to 10 times or more the flow rate of silane (SiH<SB>4</SB>) gas, the radio frequency power for total supply flow rate of gasses (RF power: energy of electromagnetic wave inputted to a deposition chamber) is set to 3W/sccm or more, substrate temperature is set to 50 to 300°C, and deposition pressure is set to 10mTorr to 50mTorr. COPYRIGHT: (C)2005,JPO&NCIPI
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