Manufacturing semiconductor device, e.g. dynamic random access memory, by forming photoresist pattern using photoresist polymer remover composition with sulfuric and acetic acids, hydrogen peroxide or ozone, ammonium fluoride

摘要

Manufacturing semiconductor device comprises forming photoresist pattern using photoresist polymer remover composition. The composition comprises (%) sulfuric acid (5-15), hydrogen peroxide (1-5) or ozone (0.0001-0.05), acetic acid (0.1-5), ammonium fluoride (0.0001-0.5), and water (balance). An independent claim is included for photolithographic method comprising forming photoresist pattern on semiconductor substrate, and cleaning photoresist pattern using photoresist polymer remover composition.