| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor quantum dot element and its manufacturing method, wherein the condition that quantum dots of high uniformity are formed, the half-width of photoluminescence can be narrowed down to an irreducible minimum. SOLUTION: The semiconductor quantum dot element is equipped with a first semiconductor buffer layer grown in crystal on a semiconductor substrate; a second semiconductor buffer layer which is grown in crystal on the first semiconductor buffer layer, has a lattice constant different from one possessed by the first semiconductor buffer layer, and is stacked thick so as not to induce three-dimensional growth; a third semiconductor buffer layer which is formed on the second semiconductor buffer layer, and grows thick enough to make an monoatomic layer flat; and a quantum dot layer which is formed on the third semiconductor buffer layer, has a lattice constant different from one possessed by the third semiconductor buffer layer, and is stacked to a critical thickness or larger, to induce a three-dimensional growth so that steps can be formed densely in various two-dimensional directions on the surface of the third semiconductor buffer layer. By this setup, quantum dots can be grown uniformly and densely in crystal in the two-dimensional plane. COPYRIGHT: (C)2005,JPO&NCIPI |
