Method of Making Contact to Semiconductor Components and Solid-state Circuits

摘要

1,159,393. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 15 July, 1966 [17 July. 1965], No. 31822/66. Heading H1K. A semi-conductor structure is mounted on a housing base comprising a glass or ceramic substrate bearing terminal regions from which extend conductive areas or tracks. " Conductive " semi-conductor regions 11 insulated from other semi-conductor regions 7 containing active (and, possibly, passive) devices extend between the upper and lower faces of the structure. The " conductive " region may be paralleled by a thin metallic layer to obtain increased conductivity. The upper face of the structure is covered with a insulating layer over which extend deposited metallic strips 2 interconnecting electrode regions of the devices with respective " conductive " semi-conductor regions. The structure is bonded to the substrate by simultaneous soldering of the lower faces of the " conductive " regions 11 to conductive areas 15, 16 on the substrate; optionally the bulk material of the device-containing regions or polycrystalline material deposited therebelow may be soldered to a track during the process. Devices may be formed in separate semi-conductor regions derived from an initial monocrystalline body consisting of an epitaxial layer on a relatively low resistivity substrate. These regions are isolated by insulation 5 from " conductive " regions formed by the deposition of polycrystalline semi-conductor into holes dividing the original monocrystal. The separate regions are held prior to the deposition by an insulating layer produced on the opposite surface of the original body; this layer may be reinforced by a temporary layer of polycrystalline semi-conductor. Constructions are described (such as oxidized grooves 20, 19) which minimize the spread of solder between adjacent bonding areas when the structure is bonded to its base. Devices formed in the separate regions may be transistors or switching circuits. Many of these may be formed from one starting body and divided therefrom after the provision of the insulated " conductive " regions.