| 摘要 |
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into the active layer. A thin film comprising SiOxNy formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1x10<15 >to 1x10<19 >cm<-3 >and hydrogen at a concentration of 2x10<19 >to 5x10<21 >cm<-3>.
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