发明名称 Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell
摘要 A photoelectric cell that includes a first insulating base, having on its surface a first electrode layer, which has on its surface a metal oxide semiconductor film, which includes anatase titanium oxide particles, on which a photosensitizer is absorbed and a second insulating base having on its surface a second electrode layer and an electrolyte sealed between the metal oxide semiconductor film and the second electrode layer. The first electrode layer and the second electrode layer are arranged opposite from each other. At least one of the first and second insulating bases with an electrode layer is transparent.
申请公布号 US6864415(B2) 申请公布日期 2005.03.08
申请号 US20030361079 申请日期 2003.02.06
申请人 CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. 发明人 KOYANAGI TSUGUO;KOMATSU MICHIO;TANAKA HIROKAZU;SHIRONO KATSUHIRO
分类号 C09C1/30;H01G9/20;(IPC1-7):H01L31/04;H01M14/00;C01G23/053;C09D1/00 主分类号 C09C1/30
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