| 发明名称 |
Capacitor having tantalum oxynitride film and method for making same |
| 摘要 |
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
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| 申请公布号 |
US6864527(B2) |
申请公布日期 |
2005.03.08 |
| 申请号 |
US20020232206 |
申请日期 |
2002.08.29 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
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代理人 |
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