| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the capacity of a semiconductor device, for example an SRAM, while retaining structures advantageous for micronization without increasing the number of layers beyond the conventional design. <P>SOLUTION: The semiconductor device has an element region arranged on the surface of a silicon substrate 1 and an isolating region adjoining the element region, with the isolating region including a capacitor region. In the element region of this semiconductor device, a gate electrode 10 is provided and, in the isolating region, an element isolating film 91 is provided, comprising a field shield lower insulating film, a field shield conductive film 3, and a field shield upper insulating film, provided in this order from the side of the silicon substrate 1. In the capacitor region, a capacitor upper conductive film 17 is provided, which faces the field shield conductive film 3 with a silicon nitride film 4 in between serving as a capacitor insulating film. The semiconductor device further has a wiring film 18 that electrically connects the gate electrode 10 and the capacitor upper conductive film 17. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
