| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor junction wafer with strong junction strength, preventing the diffusion of dopant impurities and the occurrence of voids. SOLUTION: By raising the temperatures of both closed silicon substrates 1, 2 from a low temperature region that is hard to produce the diffusion of the dopant impurities, to at least over 100°C therefrom at a slow rising speed in temperature, dehydrate condensation is generated on the surfaces thereof 1a, 2a to be joined and strong bonding is formed due to the bonding (Si-O-Si) combined with silicon (Si) and oxygen (O). Also, the occurrence of voids is suppressed by relaxing the gasification of moisture and organic substances that are absorbed on the surfaces 1a, 2a. COPYRIGHT: (C)2005,JPO&NCIPI
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