SUBSTRATE TREATING DEVICE

摘要

PROBLEM TO BE SOLVED: To eliminate the variation of film formation produced between a first batch and a second batch or after second batch by means of a substrate treating device including two or more high-temperature processes. SOLUTION: When a wafer 200 exists in a second treatment furnace 18 in or after a second batch while in the first batch the wafer 200 carried out from a first treatment furnace 16 by means of upper tweezers 10 is left in a transporting chamber 14, the carrying of the wafer 200 left in the transporting chamber 14 in the second treatment furnace 18 is waited until lower tweezers 12 take out the wafer 200 existing in the second treating furnace 18 and carries the wafer 200 in the transporting chamber 14. COPYRIGHT: (C)2005,JPO&NCIPI