发明名称 |
METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC |
摘要 |
A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
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申请公布号 |
US2005048705(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030604905 |
申请日期 |
2003.08.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURNHAM JAY S.;NAKOS JAMES S.;QUINLIVAN JAMES J.;ROQUE BERNIE A.;SHANK STEVEN M.;WARD BETH A. |
分类号 |
H01L;H01L21/31;H01L21/336;H01L21/469;(IPC1-7):H01L21/336 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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