发明名称 Polycrystalline silicon and process and apparatus for producing the same
摘要 Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm<3 >or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.
申请公布号 US6861144(B2) 申请公布日期 2005.03.01
申请号 US20020030657 申请日期 2002.01.11
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU SATORU;ODA HIROYUKI
分类号 B01J10/00;C01B33/03;(IPC1-7):B32B5/16 主分类号 B01J10/00
代理机构 代理人
主权项
地址