METHOD OF FABRICATING p-TYPE GROUP III NITRIDE COMPOUND SEMICONDUCTOR, METHOD OF FABRICATING LIGHT EMITTING DIODE AND METHOD OF FABRICATING SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To improve a crystal property and electrical conductivity and also uniform the composition ratio and the p-type impurity concentration in a growth surface of a crystal.

SOLUTION: First layers 11 of about 1 to 100 nm in thickness formed of AlGaN mixed crystal each and second layers 12 of about 1 to 100 nm in thickness formed of Mg doped p-type GaN each are stacked alternately to stack a plurality of layers. The first layers 11 and the second layers 12 that have aluminum contents and p-type impurity concentrations different from each other are formed in separate processes to enable fabricating a satisfactory p-type group III nitride compound semiconductor that has a property of p-type AlGaN mixed crystal as a whole.

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