发明名称 |
RAPID THERMAL PROCESSING REACTOR FOR PROCESSING SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a rapid thermal processing reactor which can handle wafers of multiple sizes and can heat them to an almost uniform temperature in the process. SOLUTION: A rapid thermal processing (RTP) reactor 300 uses one or two heat sources 310 to process multiple wafers 311 and 312 or a single large wafer. The single wafer is or the multiple wafers 311 and 312 are placed on a rotatable susceptor 302 supported by a susceptor support 304. A susceptor control unit rotates the wafers 311 and 312 in the process, and raises/lowers the susceptor 302 at various positions where the wafers 311 and 312 are loaded and processed. A thermal control unit controls the one or two heat sources which heat the wafers to an almost uniform temperature in the process. A gas flow control unit controls gas flow into a reaction chamber. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005045213(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20040154897 |
申请日期 |
2004.05.25 |
申请人 |
MOORE EPITAXIAL INC |
发明人 |
MOORE GARY M;NISHIKAWA KATSUHITO |
分类号 |
C23C16/44;C23C16/455;C23C16/458;C23C16/46;C23C16/48;C23C16/54;C30B25/02;C30B25/10;C30B25/12;C30B25/14;C30B31/12;C30B31/14;F27B5/04;F27B5/14;F27B5/16;F27B5/18;F27D11/00;F27D11/02;H01L21/00;H01L21/205;H01L21/22;H01L21/26;H01L21/324;H01L21/683;H01L21/687;H05B3/00;(IPC1-7):H01L21/68 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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