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发明名称
用于局部研磨控制的方法及设备
摘要
本发明提供一种用于在一处理槽室中局部研磨与沈积控制之方法及设备。在一具体实施例中,提供一用于电化学处理一基材之设备,该设备藉由控制横跨一处理区域之电性偏压轮廓而选择性地研磨一基材之离散导电部份,藉以控制在该基材的二或以上导电部份间之处理速率。
申请公布号
TW200505631
申请公布日期
2005.02.16
申请号
TW093105760
申请日期
2004.03.04
申请人
应用材料股份有限公司
发明人
蔡东辰;刘凤全;王彦;马夫里瑞喜德;陈良毓;杜布斯特艾伦
分类号
B24B37/04;H01L21/304
主分类号
B24B37/04
代理机构
代理人
蔡坤财
主权项
地址
美国
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